1N5403 [BL Galaxy Electrical]
PLASTIC SILICON RECTIFIER; 塑料硅整流
| 型号： | 1N5403 |
| 厂家： | 
BL Galaxy Electrical |
| 描述： | PLASTIC SILICON RECTIFIER |
| 文件： | 总2页 (文件大小：52K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GALAXY ELECTRICAL
1N5400 - - - 1N5408
BL
VOLTAGE RANGE: 50 --- 1000 V
CURRENT: 3.0 A
PLASTIC SILICON RECTIFIER
FEATURES
Low cost
DO - 27
Low leakage
Low forward voltage drop
High current capability
Easily cleaned with Alcohol,Isopropanol
and similar solvents
The plastic material carries U/L
recognition 94V-0
MECHANICAL DATA
Case:JEDEC DO--27,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.041 ounces,1.15 grams
Mounting position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by20%.
1N
1N
1N
1N
1N
1N
1N
1N
1N
UNITS
5400 5401
5402 5403 5404 5405 5406 5407 5408
V
V
V
Maximum recurrent peak reverse voltage
Maximum RMS voltage
50
35
50
100
70
200 300 400 500 600 800 1000
140 210 280 350 420 560 700
200 300 400 500 600 800 1000
VRRM
VRMS
VDC
Maximum DC blocking voltage
100
Maximum average forw ard rectified current
A
3.0
IF(AV)
9.5mm lead length,
@TA=75
Peak forw ard surge current
A
8.3ms single half-sine-w ave
IFSM
200.0
1.0
superimposed on rated load @TJ=125
Maximum instantaneous forw ard voltage
@ 3.0 A
V
A
VF
Maximum reverse current
@TA=25
10.0
100.0
IR
at rated DC blocking voltage @TA=100
pF
Typical junction capacitance
Typical thermal resistance
(Note1)
(Note2)
35
CJ
20
Rθ
/W
JA
Operating junction temperature range
Storage temperature range
- 55 ---- + 150
- 55 ---- + 150
TJ
TSTG
NOTE: 1. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
www.galaxycn.com
2. Thermal resistance from junction to ambient.
BLGALAXY ELECTRICAL
1.
Document Number 0260009
RATINGS AND CHARACTERISTIC CURVES
1N5400---1N5408
FIG.1 -- FORWARD DERATING CURVE
FIG.2 -- PEAK FORWARD SURGE CURRENT
4
3
200
150
℃
TJ=125
8.3ms Single Half
Sine-Wave
2
100
50
0
Single Phase
Half Wave 60H
Resistive or
Inductive Load
Z
1
0
1
2
4
8
10 20
40 60 100
0
25
50
75
100
125
150
AMBIENT TEMPERATURE,
NUMBER OF CYCLES 60Hz
FIG.3 -- TYPICAL FORWARD CHARACTERISTIC
FIG.4 -- TYPICAL JUNCTIONCAPACITANCE
10
100
60
f=1MHz
TJ=25
40
1.0
20
10
TJ=250 C
Pulse Width
=300us
4
0.1
2
1
.1
.2
.4
1.0
2
4
10 20
40
100
.01
0.4
0.6
0.8 1.0
1.2
1.4 1.6
INSTANTANEOUS FORWARDVOLTAGE, VOLTS
REVERSE VOLTAGE, VOLTS
www.galaxycn.com
2.
BLGALAXY ELECTRICAL
Document Number 0260009
相关型号：
1N5403-E3/4H
DIODE 3 A, 300 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode
VISHAY
1N5403-E3/56
DIODE 3 A, 300 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode
VISHAY
1N5403/100
Rectifier Diode, 1 Phase, 1 Element, 3A, 300V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2
VISHAY
1N5403/4E
Rectifier Diode, 1 Phase, 1 Element, 3A, 300V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2
VISHAY
1N5403/4F-E3
DIODE 3 A, 300 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode
VISHAY
1N5403/4H-E3
DIODE 3 A, 300 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode
VISHAY
1N5403/51
Rectifier Diode, 1 Phase, 1 Element, 3A, 300V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2
VISHAY
1N5403/54
Rectifier Diode, 1 Phase, 1 Element, 3A, 300V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2
VISHAY
1N5403/56
Rectifier Diode, 1 Phase, 1 Element, 3A, 300V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2
VISHAY
1N5403/58-E3
DIODE 3 A, 300 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode
VISHAY
©2020 ICPDF网 联系我们和版权申明